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NTMFS4744N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient – Steady State (Note 1)
Junction ? to ? Ambient – Steady State (Note 2)
Symbol
R q JC
R q JA
R q JA
Value
2.65
56.9
142.4
Unit
° C/W
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
30
10
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = 20 V
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain ? to ? Source On Resistance
V GS(TH)
V GS(TH) /T J
R DS(on)
V GS = V DS , I D = 250 m A
V GS = 10 V to
I D = 30 A
11.5 V
I D = 15 A
I D = 10 A
V GS = 4.5 V
I D = 30 A
1.5
5.0
7.6
7.3
7.3
10.4
2.5
10
V
mV/ ° C
m W
I D = 15 A
10.1
I D = 10 A
9.9
14
Forward Transconductance
g FS
V DS = 15 V, I D = 15 A
25
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C ISS
1300
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1 MHz, V DS = 12 V
V GS = 4.5 V, V DS = 15 V; I D = 30 A
550
132
10
0.9
1.8
5.9
17
pF
nC
Total Gate Charge
Q G(TOT)
V GS = 11.5 V, V DS = 15 V;
I D = 30 A
25
37
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
12
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V, I D = 30 A,
R G = 3.0 W
203
14
83
ns
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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